Influence of MTJ architecture on tunneling magnetoresistive effect for Al natural oxidation samples

Author

Qu, Bingjun ; Liu, Huarui ; Ren, Tianling ; Ouyang, Kequing ; Fan, Zengxu ; Liu, Litian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

765

Abstract

Top-pinned and bottom-pinned magnetic tunnel junctions (MTJs) are manufactured using a 6-gun magnetron sputter and annealing process in an applied field of 3000 Oe by pure N protecting. The top-pinned MTJ has the architecture of glass/Ta35Å/NiFe200Å/CoFe10Å/Al(10∼20Å)+oxidation/CoFe 30Å/MnIr150Å/Ta40Å. While the bottom-pinned junction structure is glass/Ta35Å/NiFe20Å/MnIr70Å/CoFe30Å/Al(10∼20Å)+oxidation/CoFeSOÅ/ NiFe45Å/Ta120Å. For the top-pinned architecture, MTJ has a very small magnetoresistive (MR) ratio (2.35%) and the exchange field is approximately 0 Oe. The bottom-pinned MTJ however, has a large MR ratio (26%) and its exchange field is higher than 400 Oe, which makes it promising for applications in magnetic random access memory (MRAM) and some magnetic sensors.

Keywords

aluminium; cobalt; glass; magnetic sensors; magnetic storage; manganese compounds; nickel alloys; oxidation; tantalum; tunnelling magnetoresistance; Al natural oxidation samples; MTJ architecture; Ta-NiFe-CoFe-Al-CoFe-MnIr-Ta; annealing process; exchange field; junction structure; magnetic random access memory; magnetic sensors; magnetron sputtering; tunneling magnetoresistive effect; Artificial intelligence; Electrodes; Giant magnetoresistance; Glass; Insulation; Magnetic semiconductors; Magnetic separation; Magnetic tunneling; Oxidation; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435115

Filename

1435115