Cascadable direct-coupled wideband SiGe HBT MMIC [amplifier]

Author

Huang, Wentao ; Xiong, Xiaoyi ; Li, Gaoqing ; Zhang, Wei ; Li, Xiyou ; Liu, Zhihong ; Qian, Peixin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2140

Abstract

This paper reports the design and performance of a single-stage Darlington-structure SiGe hetero-junction bipolar transistor (HBT) microwave monolithic integrated circuit based on an advanced SiGe HBT technology. The circuit has 11.6 dB gain at 850 MHz and 8.0 dB gain at 1950 MHz. The input and output VSWRs are 3.01:1 and 2.66:1 at 3000 MHz, respectively. This circuit consumes 140 mW DC power and has a chip size of 0.32×0.42 mm².

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; wideband amplifiers; 0.32 mm; 0.42 mm; 11.6 dB; 140 mW; 1950 MHz; 3000 MHz; 8.0 dB; 850 MHz; HBT MMIC; SiGe; VSWR; cascadable direct-coupled amplifier; single-stage Darlington-structure; wideband amplifier; Bipolar transistors; Broadband amplifiers; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave technology; Monolithic integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435266

Filename

1435266