DocumentCode
435859
Title
High yield, high uniformity, high performance 50 nm T-gate In0.52Al0.48As/In0.70Ga0.30As HEMT process
Author
Cao, Xin ; Thoms, Stephen ; Stanley, Colin ; Thayne, Iain
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
3
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
2249
Abstract
50 nm T-gates InP high electron mobility transistors (HEMTs) with a 70% indium channel were fabricated using a very robust fabrication process based on a novel UVIII/LOR/PMMA resist stack e-beam lithograph technology and on a "digital" gate recess technology. A typical device exhibited a gm of 1400 mS/mm and an ft of 420 GHz. A source and drain saturation current (IDSS) uniformity of 40 A/mm, a threshold voltage uniformity of 10 mV and a functional yield of 96% were also achieved.
Keywords
aluminium compounds; electron beam lithography; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor technology; 1400 mS/mm; 420 GHz; 50 nm; In0.52Al0.48As-In0.70Ga0.30As; InP; T-gate HEMT process; conductivity; digital gate recess technology; e-beam lithograph technology; functional yield; indium aluminium arsenide/indium gallium arsenide HEMT process; indium phosphide; millimeter-wave bands; source-drain saturation current uniformity; threshold frequency; threshold voltage uniformity; Fabrication; HEMTs; Indium gallium arsenide; Indium phosphide; Lithography; Metallization; Molecular beam epitaxial growth; Resists; Scanning electron microscopy; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435292
Filename
1435292
Link To Document