DocumentCode :
435874
Title :
A review of positive charge formation in gate oxides
Author :
Zhang, J.F. ; Zhao, C.Z.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., UK
Volume :
2
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
781
Abstract :
Positive charge formation in gate oxides is an important reliability issue for CMOS technologies. Despite of the efforts in the last several decades, our understanding of it is still limited. In this paper, recent progresses in this area are reviewed. We start with as-grown hole traps and then demonstrate that new hole traps can be created by electrical stresses. Properties of both generated and as-grown hole traps are investigated and compared. Different types of hole traps are identified and the relation between hole traps and the well-known anomalous positive charges were explored. Finally, we show that, apart from hole trapping, positive charges can also be formed by creating nonreactive hydrogenous species.
Keywords :
MOSFET; hole traps; semiconductor device reliability; CMOS technologies; MOSFET; anomalous positive charges; electrical stresses; gate oxides; grown hole traps; positive charge formation; semiconductor device reliability; Electron traps; Energy barrier; High K dielectric materials; High-K gate dielectrics; Ice; Kinetic theory; Optical device fabrication; Oxidation; Silicon; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1436623
Filename :
1436623
Link To Document :
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