• DocumentCode
    435884
  • Title

    An investigation of endurance characteristic using PDO method in FLOTOX EEPROM structures

  • Author

    Xie, Bing ; He, Yandong ; Xu, Mingzhen ; Tan, Changhua

  • Author_Institution
    Dept. of Microelectron., Peking Univ., Beijing, China
  • Volume
    2
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    835
  • Abstract
    In this paper, the endurance characteristics, in FLOTOX EEPROM structures, was mainly studied using proportional difference operator (PDO) method. At the same time, a method to predict the programming window closing time in FLOTOX EEPROM devices is presented.
  • Keywords
    EPROM; integrated circuit testing; FLOTOX EEPROM structures; endurance characteristic; programming window closing time; proportional difference operator method; Capacitance; Degradation; EPROM; Electrons; Equivalent circuits; Fabrication; Nonvolatile memory; Read-write memory; Threshold voltage; Tiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1436637
  • Filename
    1436637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435884