DocumentCode
435887
Title
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers
Author
Ning Li ; Guoqiang Zhang ; Zhongli Liu ; Kai Fan ; Zhongshan Zheng
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
851
Abstract
Ionizing radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers has been investigated. The experimental data show that the radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.
Keywords
MOSFET; SIMOX; fluorine; leakage currents; semiconductor doping; F; MOS transistors; NMOSFET; PMOSFET; fluorinated SIMOX wafers; fluorine ions; ionizing radiation response; leakage current; threshold voltage shift; Annealing; Degradation; Ionizing radiation; Leakage current; MOSFET circuits; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436641
Filename
1436641
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