• DocumentCode
    435894
  • Title

    Charging and Coulomb blockade effects in nanocrystalline Si dots embedded in SiO2 matrix

  • Author

    Wu, Liangcai ; Chen, Kunji ; Dai, Min ; Yu, Linwei ; Han, Peigao ; Zhu, Da ; Li, Wei ; Huang, Xinfan

  • Volume
    2
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    898
  • Abstract
    By using capacitance-voltage (C-V) and conductance-voltage (G-V) spectroscopy, we studied charging and Coulomb blockade effects in nanocrystalline Si (nc-Si) dots which are embedded in SiO2 matrix. Distinct frequency-dependent capacitance and conductance peaks have been observed at room temperature. These experimental results can be explained by resonant tunneling of electrons or holes into the nc-Si dots and Coulomb blockade effect in the nc-Si dots. Experimental results are in agreement with theoretical evaluation based on the model of Coulomb blockade.
  • Keywords
    Coulomb blockade; elemental semiconductors; nanostructured materials; resonant tunnelling; semiconductor quantum dots; silicon compounds; Coulomb blockade effect; SiO2; SiO2 matrix; capacitance-voltage spectroscopy; conductance-voltage spectroscopy; electron resonant tunneling; frequency-dependent capacitance; nanocrystalline Si dots; Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Frequency; Hydrogen; Nanoscale devices; Oxidation; Plasma chemistry; Spectroscopy; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1436651
  • Filename
    1436651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435894