A novel approach to evaluate the carrier effective mass in GeSi quantum dot structure

Author

Yang, Zheng ; Shi, Yi ; Liu, Jian-Lin ; Yan, Bo ; Zhang, Rong ; Zheng, You-Dou ; Wang, Kang-Long

Author_Institution

Dept. of Phys., Nanjing Univ., China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

913

Abstract

Carrier effective mass in the self-assembled GeSi quantum dots (QDs) grown by a solid-source molecular beam epitaxy (MBH) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.

Keywords

Ge-Si alloys; Raman spectra; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; Arrhenius-Berthelot type function; GeSi; Raman scattering measurement; carrier effective mass; self-assembled GeSi quantum dots; solid-source molecular beam epitaxy; temperature-dependent photoluminescence; Effective mass; Germanium silicon alloys; Optical scattering; Quantum dots; Radiative recombination; Raman scattering; Silicon germanium; Spontaneous emission; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436655

Filename

1436655