Threshold voltage correction model for quantum short channel

Author

Zhang, Dawei ; Yu, Zhiping ; Tian, Lilin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

946

Abstract

The fact that the quantum mechanical (QM) effects along the channel, defined as the quantum short channel effects (QSCE) non-negligibly influence device characteristics in decanano-scaled MOSFETs is highlighted. A threshold voltage correction model for the QSCE is established using the concept of "locality" and the analytical solution to 2-D Poisson equation. This model correctly reflects the relation between the QSCE and device parameters and is convenient to be embedded into SPICE models. It is concluded that the correction to threshold voltage due to the QSCE is necessary through comparison to the experimental data of a 45nm MOSFET from TSMC 45nm MOSFET, internal documentation.

Keywords

MOSFET; Poisson equation; SPICE; quantum theory; semiconductor device models; 2D Poisson equation; SPICE model; decanano-scaled MOSFET; quantum mechanical effect; quantum short channel; threshold voltage correction model; Analytical models; Carrier confinement; Circuits; MOSFETs; Microelectronics; Numerical simulation; Poisson equations; Quantum mechanics; SPICE; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436662

Filename

1436662