DocumentCode
435905
Title
A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs
Author
Yu, Chun-Li ; Hao, Yue ; Yang, Lin-An
Author_Institution
Microelectron. Inst., Xidian Univ., Xi´´an, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
958
Abstract
A new method which utilizes the linear regression at subsections of the gate bias range is proposed for parameter extraction in deep-submicron lightly doped drain (LDD) MOSFETs. It avoids the range optimization and retains the accuracy of the linear regression extraction. The extracted gate bias dependent parameters are implemented in the proposed I-V model for LDD MOSFETs, resulting good agreements between simulations and measurements.
Keywords
MOSFET; electric resistance; parameter estimation; regression analysis; I-V model; deep-submicron MOSFETs; effective channel length; gate bias range; lightly doped drain MOSFETs; linear regression; mobility extraction; parameter extraction; parasitic series resistance; Data mining; Electric resistance; Length measurement; Linear regression; MOSFETs; Microelectronics; Optimization methods; Parameter extraction; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436665
Filename
1436665
Link To Document