An analytical charge density model comprising 1D quantum mechanical (QM) effect for sub-100nm bulk silicon MOSFETs

Author

Guangping, Zhu ; Dawei, Zhang ; Lilin, Tian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

962

Abstract

An analytical charge density model considering 1D quantum mechanical (QM) effect perpendicular to the channel, which has substantial impact on the characteristics of sub-100nm bulk silicon MOSFETs is developed. The model yields excellent accuracy compared to numerical simulations in both sub-threshold region and strong inversion region, in a large range of channel doping and oxide thickness. Therefore, it is promising to develop a more accurate I-V and C-V model for nano-scale MOSFETs, especially in sub-threshold region.

Keywords

MOSFET; semiconductor device models; semiconductor doping; 1D quantum mechanical effect; C-V model; I-V model; Si; bulk silicon MOSFET; channel doping; charge density model; nanoscale MOSFET; numerical simulation; oxide thickness; strong inversion region; sub-threshold region; Analytical models; Capacitance; Capacitance-voltage characteristics; Doping; MOSFETs; Microelectronics; Numerical simulation; Quantum mechanics; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436666

Filename

1436666