DocumentCode
435909
Title
Quantum effect simulation of SOI MOSFETs considering impact ionization
Author
Toyabe, Toru
Author_Institution
Bio-Nano Electron. Res. Centre, Toyo Univ., Saitama, Japan
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
987
Abstract
A robust quantum effect device simulator with density gradient model is developed. Characteristics of nanometer scale SOI MOSFETs are simulated including quantum effect and impact ionization for the first time. In extremely small SOI MOSFETs the impact ionization is suppressed.
Keywords
MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; SOI MOSFET; density gradient model; impact ionization; quantum effect simulation; Charge carrier density; Current density; Electron mobility; Electrostatics; Equations; Impact ionization; MOSFETs; Potential well; Quantum mechanics; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436671
Filename
1436671
Link To Document