Monte Carlo simulation of hole non-stationary transports in UTB SOI pMOSFET

Author

Du, Gang ; Liu, Xuaoyan ; Xia, Zhiliang ; Han, Ruqi

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

995

Abstract

UTB SOI device as a kind of non-conventional structure, are hope to take place of conventional CMOS in near future. Many works have been done on this kind of devices but rarely work has investigated the non-stationary transports effect in pMOSFET. In this paper, hole transports in UTB SOI pMOSFET are studied by using 2-D full band ensemble Monte Carlo device simulator. The hole non-stationary transport effect is important in sub-100nm UTB device. The hole velocity overshooting make the device performance keep increasing as channel length scaling down. The UTB SOI pMOSFETs show a better scalability than nMOSFETs.

Keywords

MOSFET; Monte Carlo methods; hole mobility; silicon-on-insulator; 2D full band ensemble Monte Carlo device simulator; CMOS; Monte Carlo simulation; UTB SOI pMOSFET; hole nonstationary transports; hole velocity overshooting; non-conventional structure; Acoustic scattering; CMOS technology; Charge carrier processes; Doping; Electrons; MOSFET circuits; Microelectronics; Monte Carlo methods; Optical scattering; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436673

Filename

1436673