DocumentCode
435940
Title
A new closed-form expression for capacitive coupling of lossy substrate
Author
Gao, Wei ; Yu, Zhiping
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1151
Abstract
A new closed-form expression has been developed to model capacitive substrate coupling on RF CMOS chips. The electric wall approximation for the oxide-substrate interface is used in the model. The closed-form for single and multiple parallel on-chip interconnects are given. The methodology is applicable to some particular 3D cases.
Keywords
CMOS integrated circuits; approximation theory; coupled circuits; integrated circuit interconnections; interface phenomena; radiofrequency integrated circuits; substrates; RF CMOS chips; capacitive coupling; capacitive substrate coupling; closed-form expression; electric wall approximation; lossy substrate; multiple parallel on-chip interconnect; oxide-substrate interface; Capacitance; Closed-form solution; Couplings; Integrated circuit interconnections; Magnetic noise; Microelectronics; Passivation; Permittivity; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436725
Filename
1436725
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