Poisson-Boltzmann solutions to the one-dimensional oxide-silicon-oxide system

Analytical solutions to the 1-dimensional, double-side gated oxide-silicon-oxide system with intrinsic silicon body are presented. The solution space, parameterized by the gate bias conditions, is divided into two separate domains admitting either a "zero-field" or a "zero-potential" solution. The boundary between the two domains is defined by the "zero-potential and zero-field" solution. Some general implications of the solutions are discussed. Screening effects leading to "saturation" of the body potential and electric field are discussed. The "zero-field" solution is used to define and analyse the linearly extrapolated threshold voltage values of symmetrical double-gate metal-oxide-semiconductor devices, with or without deliberate body doping.