A bumpy journey with GaAs IC foundries in Taiwan and new perspectives of HBT technology readiness for wireless communications in Asia Pacific market

Author

Yang, Li-Wu ; Chi, Tom ; Wang, David ; Huang, Eric

Author_Institution

Ultra Wideband Inc., Arcadia, CA, USA

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1230

Abstract

This paper reviews a commercial available InGaP-HBT technology in the region that yields linear power amplifiers for IEEE 802.11a/b/g applications. A few examples of product-oriented power amplifiers and building blocks with rf performance are discussed for multimode GSM/GPRS and future trend of PA development for EDGE and WCDMA.

Keywords

IEEE standards; III-V semiconductors; cellular radio; gallium arsenide; heterojunction bipolar transistors; indium compounds; packet radio networks; power amplifiers; radiofrequency integrated circuits; Asia Pacific market; EDGE; GaAs; HBT technology readiness; IC foundries; IEEE 802.11a/b/g; InGaP; WCDMA; linear power amplifiers; multimode GPRS; multimode GSM; rf performance; wireless communications; Asia; Foundries; GSM; Gallium arsenide; Ground penetrating radar; Heterojunction bipolar transistors; Multiaccess communication; Power amplifiers; Radiofrequency amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436754

Filename

1436754