Recent advances in CDMA power amplifier module developments

Author

Wang, Xinwei ; Xinwei Wang ; Li, Ping ; Tang, Andy ; Souchuns, Chris ; Chen, Wen ; McNamara, Brian ; Xudong Wang ; Liu, Li ; Apel, Tom ; Pavio, Ray ; Canfiel, John

Author_Institution

TriQuint Semicond., Lowell, MA, USA

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1236

Abstract

In this paper, the recent advances of CDMA power amplifier module developments for wireless handset applications are reviewed. Technology choices among GaAs, SiGe and PHEMT for linear PA designs are compared. The trade-offs of circuit design and module approaches are discussed in detail. The measured performances of some representative state of the art power amplifier modules are presented. The high integration of more front-end components and functionalities into the power amplifier module and the increasing demand for high linear efficiency at lower output power has become a widely acceptable trend.

Keywords

Ge-Si alloys; III-V semiconductors; code division multiple access; gallium arsenide; integrated circuit design; mobile handsets; power HEMT; power amplifiers; CDMA power amplifier module; GaAs; PHEMT; SiGe; circuit design; linear PA design; wireless handset application; Circuit synthesis; Gallium arsenide; Germanium silicon alloys; Integrated circuit measurements; Multiaccess communication; PHEMTs; Power amplifiers; Power measurement; Silicon germanium; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436755

Filename

1436755