DocumentCode
436740
Title
Experimental study of single-event transient current in SOI devices
Author
Hirao, T. ; Shibata, T. ; Laird, J.S. ; Onoda, S. ; Takabashi, Y. ; Ohnishi, K. ; Kamiya, T.
fYear
2003
fDate
15-19 Sept. 2003
Firstpage
305
Lastpage
309
Keywords
Charge measurement; Computational modeling; Computer simulation; Current measurement; Doping; Ion beams; MOS capacitors; Oxygen; Satellites; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location
Noordwijk, The Netherlands
ISSN
0379-6566
Print_ISBN
92-9092-846-8
Type
conf
Filename
1442461
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