DocumentCode :
436759
Title :
Effect of high-temperature electron irradiation in deep submicron MOSFETs
Author :
Hayama, K. ; Ohyanm, H. ; Takakura, K. ; Simoen, E. ; Mercha, A. ; Claeys, C.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
443
Lastpage :
448
Keywords :
CMOS technology; Degradation; Dielectric materials; Electric variables measurement; Electrons; MOSFETs; Materials reliability; Space technology; Temperature distribution; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442502
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436759
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