Advances and trends in OMVPE and MBE for III V epitaxy

Summary form only given. Reviews the state of the art growth technologies available for the production and R & D of III V materials. Over the last decade very substantial progress has been made in the development of both bulk and epitaxial technologies capable of routinely producing highly complex and uniform wafers of up to 150 mm diameter, facilitating the cost effective production of large area integrated device technologies. The author provides a review of the different growth technologies and their capabilities, using recent production data to illustrate key points.