Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substrates

Author

Saitoh, Takumi ; Nomura, Ichirou ; Takashima, Yasushi ; Nakai, Yuki ; Yamazaki, Tomohiro ; Kikuchi, Akihiko ; Kishino, Katsumi

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

64

Lastpage

67

Abstract

Middle-range visible light emitting diodes (LEDs) were fabricated using MgZnCdSe, BeZnTe, and BeZnSeTe II-VI materials grown on InP substrates by molecular beam epitaxy. By changing the elemental compositions of BeZnSeTe active layers, yellow-green-to-orange emissions were obtained at 542, 575, and 594 nm in wavelength. A long lifetime CW operation of the 575 nm yellow LED for more than 3000 hours has been achieved. The injection current density was 130 A/cm². This result shows higher reliability of the BeZnSeTe LEDs against the precedent ZnCdSe/MgZnSSe-based II-VI LEDs on GaAs substrates.

Keywords

II-VI semiconductors; beryllium compounds; cadmium compounds; current density; light emitting diodes; magnesium compounds; molecular beam epitaxial growth; optical fabrication; selenium compounds; semiconductor epitaxial layers; visible spectra; zinc compounds; 542 nm; 575 nm; 594 nm; BeZnSeTe-MgZnCdSe; II-VI compounds; InP; LED; injection current density; molecular beam epitaxy; visible light emitting diodes; Current density; Gallium arsenide; Indium phosphide; Laser sintering; Lattices; Light emitting diodes; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442612

Filename

1442612