• DocumentCode
    436807
  • Title

    Process optimization for dry etching of InP-InGaAsP-based photonic crystals with a Cl2/CH4/H2 mixture on an ICP-RIE

  • Author

    Strasser, P. ; Wuest, R. ; Robin, F. ; Erni, D. ; Jackel, H.

  • Author_Institution
    Electron. Lab., ETH, Zurich, Switzerland
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    Etching photonic crystals (PhCs) in InP/InGaAsP requires a process with high selectivity against the mask for the fabrication of about 2 μm deep holes as required for PhCs in a low refractive-index-contrast material system. We etch PhCs with a Cl2/CH4/H2 gas mixture on an ICP-RlE system. In this paper, we present our fabrication technology and discuss the influence of the mask material and layer composition on the etched hole shape.
  • Keywords
    III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; masks; optical fabrication; optical waveguides; optimisation; photonic crystals; refractive index; sputter etching; ICP-RIE; InP-InGaAsP; dry etching; mask material; photonic crystals; refractive-index-contrast material system; Crystalline materials; Dry etching; Fabrication; Indium phosphide; Photonic crystals; Plasma applications; Shape; Silicon compounds; Slabs; Sputter etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442639
  • Filename
    1442639
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=436807