P-channel chip-scale lateral power MOSFET for portable electronics applications

Author

Shen, Z.J. ; Okada, D. ; Lin, F. ; Cheng, X. ; Anderson, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

Volume

1

fYear

2005

fDate

6-10 March 2005

Firstpage

343

Abstract

P-channel power MOSFETs are widely used in portable electronics products as the load switch. We report a new 12 V P-channel chip-scale lateral power MOSFET with ultra-low on-resistance and small package footprint. The product of RDS (ON) and footprint area of the lateral MOSFET is reduced by nearly 50% comparing to the conventional trench MOSFET with the same voltage rating. We have developed an innovative metal interconnect and chip-scale packaging approach to overcome the "scaling issue" which limits the chip size and current rating of traditional lateral power devices. The lateral MOSFET is designed and fabricated based on a standard 0.5 μm CMOS process, and packaged in flip-chip forms using a wafer bumping technology. P-channel Lateral Power^™ MOSFETs provide a good solution for load switching in all sorts of battery-powered portable electronics products.

Keywords

CMOS integrated circuits; chip scale packaging; electronic products; integrated circuit interconnections; load management; power MOSFET; 12 V; CMOS process; P-channel chip-scale lateral power MOSFET; battery-powered portable electronics products; chip-scale packaging approach; lateral power devices; load switch; load switching; ultralow onresistance; voltage rating; wafer bumping technology; Application software; Batteries; Chip scale packaging; Consumer electronics; Driver circuits; Energy management; MOSFET circuits; Power MOSFET; Power system management; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE

Print_ISBN

0-7803-8975-1

Type

conf

DOI

10.1109/APEC.2005.1452948

Filename

1452948