Magnetite Schottky barriers on GaAs substrates

Author

Watts, Steven M. ; Booth, Catherinc ; Van Dijken, S. ; Coey, J.M.D.

Author_Institution

Dept. of Phys., Trinity Coll., Dublin, Ireland

fYear

2005

fDate

4-8 April 2005

Firstpage

633

Lastpage

634

Abstract

The electrical transport properties across the interface of hybrid Fe₃O₄/GaAs(001) structures were investigated in this study. The substrates with p- and n-type structures of different doping levels were used. Rectification was observed for the medium-doped substrates. It was determined that the Schottky barrier height of medium doped n-type structure was 0.55-0.6 eV while that of the medium p-type structure was 0.45 eV. At high doping level, the transport characteristics of the substrates were found to be linear at room temperature but strongly nonlinear at low temperatures. It was concluded that with proper engineering of the semiconductor surface doping profile, it is possible to isolate different transport modes for spin injection experiments.

Keywords

III-V semiconductors; Schottky barriers; doping profiles; ferrites; gallium arsenide; rectification; semiconductor-insulator boundaries; spin polarised transport; 0.45 eV; 0.55 to 0.6 eV; 293 to 298 K; Fe₃O₄-GaAs; GaAs; Schottky barrier height; doping levels; electrical transport properties; magnetite; rectification; semiconductor surface doping profile; spin injection experiments; transport modes; Gallium arsenide; Laboratories; Magnetic materials; Magnetic semiconductors; Schottky barriers; Semiconductor films; Semiconductor materials; Spin polarized transport; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463745

Filename

1463745