Application of FeCoB high-Hk hetero amorphous thin film to RF integrated inductor

Author

Yamaguchi, M. ; Kim, K.-H. ; Kuribara, T. ; Fukushima, T. ; Munakata, M. ; Yagi, M.

Author_Institution

Dept. of Electr. & Commun. Eng., Tohoku Univ., Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

809

Lastpage

810

Abstract

In this work, the Q value twice as high as the existing report at 2 GHz band using newly developed high-B and high-Hk FeCoB hetero amorphous thin film is demonstrated. The ferromagnetic thin film was deposited by RF magnetron sputtering. The value Q=9 was obtained for the 20/2 design and Q=10 for the 18/4 design at 2 GHz. This was possible because of high FMR frequency of the hetero amorphous Co₂₇Fe₆₂B₁₁ film and the smooth surface for the magnetic film deposition defined by the CMP process.

Keywords

amorphous magnetic materials; boron alloys; chemical mechanical polishing; cobalt alloys; ferromagnetic materials; ferromagnetic resonance; iron alloys; magnetic thin films; sputtered coatings; 18/4 design; 2 GHz; 20/2 design; Co₂₇Fe₆₂B₁₁; FMR frequency; Q value; RF integrated inductor; RF magnetron sputtering; chemical mechanical polishing; ferromagnetic thin film; high-B hetero amorphous thin film; high-Hk hetero amorphous thin film; magnetic film deposition; Amorphous materials; Frequency measurement; Magnetic films; Magnetic resonance; Mobile communication; Radio frequency; Spirals; Thin film circuits; Thin film inductors; Yagi-Uda antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463833

Filename

1463833