Switching of magnetostrictive micro-dot arrays by mechanical strain

CoFeBSi and FeCo magnetostrictive micro-and nano-dot arrays are fabricated on Si₃N₄ membranes with different diameters (50 to 300 μm) by combining MEMS fabrication processes and thin film technology. Compressive or tensile mechanical strain is introduced in order to observe the inverse magnetostriction effect or the Villary effect. Magnetic force microscopy and MOKE measurements are employed in order to investigate the strain induced switching properties and resolve the domain structure of the amorphous micro- and nano-dot arrays. The local strain distribution of the various membrane structures is obtained by finite-element method. The results of the simulations are then compared to the experimental results.