Nanometer scaled magnetic tunnel junctions fabricated by a substrate biased plasma etching technique

Author

Lee, K.I. ; Chang, J.Y. ; Han, S.H. ; Shin, K.H. ; Lee, W.Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

1971

Lastpage

1972

Abstract

SiO₂/Ta(50 Å)/Ni₈₁Fe₁₉(60 Å)/Fe₅₀Mn₅₀(80 Å)/FM_BOTTOM(40 Å)/Al₂O₃(12-16 Å)/FM_TOP(100 Å)/Ta(20 Å) are prepared on a thermally oxidized Si(100) substrate. FM layer used is Ni₈₁Fe₁₉ or Co₈₄Fe₁₆. The effect of substrate-biased plasma etching process on magnetotransport properties in magnetic tunnel junctions compared to that of the device prepared by a conventional way is investigated. Several properties such as TMR ratio and junction resistance, magnetization switching behavior of the MTJs are also investigated.

Keywords

aluminium compounds; ferromagnetic materials; iron alloys; magnetic switching; magnetisation; manganese alloys; nanostructured materials; nanotechnology; nickel alloys; silicon compounds; sputter etching; tantalum; tunnelling magnetoresistance; Si; SiO₂-Ta-Ni₈₁Fe₁₉-Fe₅₀Mn₅₀-Ni₈₁Fe₁₉-Al₂O₃-Co₈₄Fe₁₆-Ta; TMR; dry etching process; electron beam lithography; junction resistance; lift-off technique; magnetization switching; magnetotransport properties; nanometer scaled magnetic tunnel junctions; substrate biased plasma etching technique; thermally oxidized substrate; Etching; Iron; Magnetic devices; Magnetic properties; Magnetic switching; Magnetic tunneling; Magnetization; Plasma applications; Plasma devices; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464424

Filename

1464424