Room temperature stability study in silicon base magnetic tunneling transistor

The room temperature stability of a silicon base magnetic tunneling transistor fabricated by a magnetic tunneling junction (MTJ) with a p-n junction barrier prepared on a Si (100) substrate is reported. The collector current and the change of magnetocurrent (MC) at room temperature as a function of magnetic field at the emitter bias is investigated. The collector current varies from 4.2 μA at magnetically parallel state to 2.89 μA at magnetically anti-parallel state. The emitter voltage dependence of emitter currents and the transfer ratio at the parallel state were observed to increase as the emitter voltage (V_E) is increased. MC of emitter and base currents decreases as V_E goes up while the MC of the collector current reaches a maximum at V_E of 1.2 V.