• DocumentCode
    439180
  • Title

    The impact of scaling down to deep-submicron on CMOS RF circuits

  • Author

    Huang, Qiuting ; Piazza, Francesco ; Orsatti, Paolo ; Ohguro, Tatsuya

  • Author_Institution
    Swiss Federal Institute of Technology, Zurich, Switzerland
  • fYear
    1997
  • fDate
    16-18 Sept. 1997
  • Firstpage
    132
  • Lastpage
    135
  • Abstract
    Recent papers reporting CMOS RF building blocks with very low current consumption have aroused much expectation in RF receivers using deep-submicron technologies. This paper examines the trend in CMOS scaling, in order to establish the required current levels for different feature sizes if robust designs are to be implemented. The need to match to 50Ω and to limit voltage gain in the input passive matching network is emphasized because it is often overlooked. At 1GHz, 0.25µm CMOS appears to be the threshold for robust, low-NF RF Front-ends with current consumption competive to today´s BJT implementations.
  • Keywords
    CMOS process; CMOS technology; Doping; Integrated circuit technology; Laboratories; Paper technology; Parasitic capacitance; Radio frequency; Robustness; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
  • Conference_Location
    Southampton, UK
  • Type

    conf

  • Filename
    1470881