DocumentCode
439222
Title
A low-power, high-speed 0.25 µm GaAs D-FF
Author
Enomoto, T. ; Hirobe, A. ; Iwata, H. ; Fujii, M. ; Yoshida, N. ; Asai, S.
Author_Institution
Chuo University, Tokyo, Japan
fYear
1997
fDate
16-18 Sept. 1997
Firstpage
300
Lastpage
303
Abstract
A design for low-power, high-speed static GaAs HJFET flip-flops (D-FFs) is discussed in detail. Four different types of delay latches based on NOR gates were designed. These latches were used to design 16 different types of D-FFs. A D-FF named "1POP" was chosen for fabrication using 0.25 µm GaAs HJFET technology. Experimental results showed that both the maximum operating clock frequencies (fmc ) and power dissipations at fmc were proportional to supply voltage (VD ). The "1P0P" D-FF operated at fmc of 5.17 GHz on VD =0.6 V consuming only 2.03 mW that is the world\´s lowest power dissipation. Clear, wide eye openings were obtained in a fmc range up to 7.15 GHz. Operating speeds were confirmed at an error rate of less than 10-9with a (29-1) pseudo-random signal.
Keywords
Clocks; Delay; Driver circuits; Energy consumption; Equations; Flip-flops; Gallium arsenide; Latches; Master-slave; Power dissipation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location
Southampton, UK
Type
conf
Filename
1470923
Link To Document