• DocumentCode
    439237
  • Title

    A 1 GHz, 40 mW fully integrated continuous-time second-order bandpass filter in GaAs technology

  • Author

    Moughabghab, R.

  • Author_Institution
    IEMN, Villeneuve d´´Ascq, France
  • fYear
    1997
  • fDate
    16-18 Sept. 1997
  • Firstpage
    364
  • Lastpage
    367
  • Abstract
    A Second-Order bandpass Gm-C filter with a 1 GHz center frequency is presented. The circuit features an independent control of the cutoff frequency and of the quality factor. The fully-differential integrators use a gain-enhancement technique, capable of increasing the basic transconductor open-loop DC gain to 52 dB. The filter has been fabricated in a digital 0.7 µm, GaAs MESFET process featuring 25 GHz fttransistors. It dissipates 40 mW from a single 1.9 V power supply.
  • Keywords
    Band pass filters; Cutoff frequency; Digital filters; Gain; Gallium arsenide; Integrated circuit technology; MESFETs; Open loop systems; Q factor; Transconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
  • Conference_Location
    Southampton, UK
  • Type

    conf

  • Filename
    1470939