• DocumentCode
    439288
  • Title

    A CMOS IC for X-ray computed tomography

  • Author

    Qiuting Huang ; Biber, A. ; Oberle, M.

  • Author_Institution
    Swiss Federal Institute of Technology, Zurich, Switzerland
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    224
  • Lastpage
    227
  • Abstract
    In x-ray tomography CdTe detectors can be used to convert photons into impulses of charge. A fully integrated charge-sensitive system is implemented in this work, that convert a few femptocoulombs of charge to voltage pulses of around 100-500 mV, while preserving the sharpness of the impulses. On-chip comparator and delay logic convert this analog output into a digital pulse train of fixed, narrow pulse width, ready to be counted by the computer. The op-amps used in the charge-sensitive amplifier have 65Mhz GBW, 80dB DC gain and >70° phase margin. It has a white noise spectral density of 8nV/sqrt(Hz) and a flicker noise corner frequency of 100kHz. The IC is capable of resolving a minimum ion impulse rate of 5-10 Mhz and a minimum input charge of 1 femptocoulomb.
  • Keywords
    CMOS integrated circuits; Computed tomography; Operational amplifiers; Pulse amplifiers; Single photon emission computed tomography; Space vector pulse width modulation; X-ray detection; X-ray detectors; X-ray imaging; X-ray tomography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Conference_Location
    The Hague, The Netherlands
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186249
  • Filename
    1471006