DocumentCode :
439288
Title :
A CMOS IC for X-ray computed tomography
Author :
Qiuting Huang ; Biber, A. ; Oberle, M.
Author_Institution :
Swiss Federal Institute of Technology, Zurich, Switzerland
fYear :
1998
fDate :
22-24 Sept. 1998
Firstpage :
224
Lastpage :
227
Abstract :
In x-ray tomography CdTe detectors can be used to convert photons into impulses of charge. A fully integrated charge-sensitive system is implemented in this work, that convert a few femptocoulombs of charge to voltage pulses of around 100-500 mV, while preserving the sharpness of the impulses. On-chip comparator and delay logic convert this analog output into a digital pulse train of fixed, narrow pulse width, ready to be counted by the computer. The op-amps used in the charge-sensitive amplifier have 65Mhz GBW, 80dB DC gain and >70° phase margin. It has a white noise spectral density of 8nV/sqrt(Hz) and a flicker noise corner frequency of 100kHz. The IC is capable of resolving a minimum ion impulse rate of 5-10 Mhz and a minimum input charge of 1 femptocoulomb.
Keywords :
CMOS integrated circuits; Computed tomography; Operational amplifiers; Pulse amplifiers; Single photon emission computed tomography; Space vector pulse width modulation; X-ray detection; X-ray detectors; X-ray imaging; X-ray tomography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location :
The Hague, The Netherlands
Type :
conf
DOI :
10.1109/ESSCIR.1998.186249
Filename :
1471006
Link To Document :
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