DocumentCode :
439309
Title :
A high frame rate image sensor in standard CMOS-technology
Author :
Stevanovic, N. ; Hillebrand, M. ; Hosticka, B.J. ; Iurgel, U. ; Teuner, A.
Author_Institution :
Fraunhofer Institute of Microelectronic Circuits and Systems, Duisburg, Germany
fYear :
1998
fDate :
22-24 Sept. 1998
Firstpage :
316
Lastpage :
319
Abstract :
An integrated CMOS image sensor suitable for monitoring fast motion e.g. in very fast industrial processes, crash tests, and high speed machine vision has been developed and tested. The test chip contains 128×128 active sensor cells and it is equipped with an electronic shutter, advanced column current-mode readout circuits and column voltage buffers. For design and fabrication a standard 1.0 µm n-well CMOS process has been used. The size of a single pixel cell is 27.6 µm × 27.6 µm with a fill factor of 42% incorporating four NMOS transistors. The total chip area is 30mm2. The sensor cells show a linear response to illumination. The test chip is capable to acquire 1030 frames/s.
Keywords :
CMOS image sensors; CMOS process; Circuit testing; Condition monitoring; Electronic equipment testing; Fabrication; Image sensors; Machine vision; Vehicle crash testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location :
The Hague, The Netherlands
Type :
conf
DOI :
10.1109/ESSCIR.1998.186272
Filename :
1471029
Link To Document :
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