DocumentCode
439342
Title
BiCMOS differential temperature sensor: Characterization and BIST applications
Author
Altet, Josep ; Aragonés, Xavier ; Gonzàlez, José Luis ; Mateo, Diego ; Rubio, Antonio
Author_Institution
Universitat Politècnica de Catalunya, Barcelona, Spain
fYear
1998
fDate
22-24 Sept. 1998
Firstpage
484
Lastpage
487
Abstract
Measurements of thermal gradients inside the silicon die can be used for BIST applications. Two temperature sensors sensible to changes of the surface thermal gradient have been implemented in a 1.2 µm BiCMOS technology. Results show that the power dissipated by a circuit can be monitored by placing differential temperature sensors. A detailed analysis of the noise coupled to the sensor in a mixed signal circuit environment is performed.
Keywords
BiCMOS integrated circuits; Built-in self-test; Circuit noise; Coupling circuits; Monitoring; Performance analysis; Signal analysis; Silicon; Temperature sensors; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type
conf
DOI
10.1109/ESSCIR.1998.186314
Filename
1471071
Link To Document