Title :
A 32Mb -4b/cell analog flash memory supporting variable density with 3V-only supply and serial I/O
Author :
Rolandi, P.L. ; Pasotti, M. ; Campardo, G. ; Canegallo, R. ; De Sandre, G. ; Guaitini, G. ; Issartel, C. ; Lhermet, F. ; Maurelli, A. ; Rocchi, A. ; Kramer, A.
Author_Institution :
STMicroelectronics, Agrate Brianza(MI), Italy
Abstract :
This 8M cells Flash EEPROM using the Analog Flash technology is able to store up to 32Mbit of digital data (4bit/cell). The fully integrated memory chip has a 3V-only power supply and a dual standard configurable serial I/O interface (SPI and I2C) to allow 6+1 pin packaging suited for small form factor removable memory card. The analog flash programming is managed by an embedded microcontroller. The chip is fabricated in a standard 3V 0.5µm common-ground NOR Flash-EEPROM process (2 polys, 3 metals) with channel hot electron programming and Fowler-Nordheim tunnelling erasing. The cell is 1.7×1.9µm2, the chip area is 13.5×6.1mm2.
Keywords :
Circuits; Costs; EPROM; Flash memory; Hip; Operational amplifiers; Packaging; Postal services; Research and development; Tellurium;
Conference_Titel :
Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
Conference_Location :
Duisburg, Germany