• DocumentCode
    439377
  • Title

    A 32Mb -4b/cell analog flash memory supporting variable density with 3V-only supply and serial I/O

  • Author

    Rolandi, P.L. ; Pasotti, M. ; Campardo, G. ; Canegallo, R. ; De Sandre, G. ; Guaitini, G. ; Issartel, C. ; Lhermet, F. ; Maurelli, A. ; Rocchi, A. ; Kramer, A.

  • Author_Institution
    STMicroelectronics, Agrate Brianza(MI), Italy
  • fYear
    1999
  • fDate
    21-23 Sept. 1999
  • Firstpage
    130
  • Lastpage
    133
  • Abstract
    This 8M cells Flash EEPROM using the Analog Flash technology is able to store up to 32Mbit of digital data (4bit/cell). The fully integrated memory chip has a 3V-only power supply and a dual standard configurable serial I/O interface (SPI and I2C) to allow 6+1 pin packaging suited for small form factor removable memory card. The analog flash programming is managed by an embedded microcontroller. The chip is fabricated in a standard 3V 0.5µm common-ground NOR Flash-EEPROM process (2 polys, 3 metals) with channel hot electron programming and Fowler-Nordheim tunnelling erasing. The cell is 1.7×1.9µm2, the chip area is 13.5×6.1mm2.
  • Keywords
    Circuits; Costs; EPROM; Flash memory; Hip; Operational amplifiers; Packaging; Postal services; Research and development; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
  • Conference_Location
    Duisburg, Germany
  • Type

    conf

  • Filename
    1471113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439377