• DocumentCode
    439384
  • Title

    A 500MS/sec -54dB THD S/H circuit in a 0.5 µm CMOS process

  • Author

    Hadidi, K. ; Muramatsu, Daigo ; Oue, T. ; Matsumoto, T.

  • Author_Institution
    Urmia University, Urmia, Iran
  • fYear
    1999
  • fDate
    21-23 Sept. 1999
  • Firstpage
    158
  • Lastpage
    161
  • Abstract
    Based on an open-loop architecture and a highly linear buffer, a S/H was implemented in a 0.5µm CMOS process. Its differential architecture allows a single NMOS device to do sampling for both halves of the circuit, eliminating any error of otherwise mismatched sampling switches. The circuit achieved a performance of 500MS/sec, -54dB THD for a 50MHz 1Vp-p input. The THD was reduced to -74dB for a 10MHz, 1.5Vp-p at 100MS/sec. Input range of the circuit is 2.0Vp-p. Note that intentionally large devices were used in the circuit to minimise parasitic capacitor effects on the circuit during testing. For use inside an ADC, the device sizes can be scaled down by a factor of 4. Then the power consumption would be reduced to 5.5mW from existing 21 mW. The device requires a 3.3 Volt supply and an area of 0.15mm2(which can be reduced to 0.04mm2after scaling down).
  • Keywords
    CMOS process; Circuit testing; Feedback circuits; Linearity; MOS devices; Samarium; Sampling methods; Switches; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
  • Conference_Location
    Duisburg, Germany
  • Type

    conf

  • Filename
    1471120