• DocumentCode
    439471
  • Title

    A low stress 20dBm power amplifier for LINC transmission with 50% peak PAE in 0.25 µm CMOS

  • Author

    Tarsia, M. ; Khoury, Joud ; Boccuzzi, V.

  • Author_Institution
    Lucent Bell-Labs, Murray Hill, NJ
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    A low stress 1-GHz 0.25µm CMOS power amplifier intended for Linear Amplification with Non-linear Components(LINC) transmission is presented. The class-D output stage is partially soft-switched with a stacked pseudoclass-E pre-amplifier driver for increased efficiency. Operating from a 2.5V supply, the amplifier achieves a 50% Power-Added Efficiency(PAE) with a 1-GHz CW signal at a peak output power of 20 dBm. Two tone measurements yield a PAE of 35% with inter-modulation components below 35dBc.
  • Keywords
    Breakdown voltage; CMOS technology; Capacitance; Driver circuits; Frequency; Inductors; MOS devices; Power amplifiers; Power generation; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471213