Title :
A low stress 20dBm power amplifier for LINC transmission with 50% peak PAE in 0.25 µm CMOS
Author :
Tarsia, M. ; Khoury, Joud ; Boccuzzi, V.
Author_Institution :
Lucent Bell-Labs, Murray Hill, NJ
Abstract :
A low stress 1-GHz 0.25µm CMOS power amplifier intended for Linear Amplification with Non-linear Components(LINC) transmission is presented. The class-D output stage is partially soft-switched with a stacked pseudoclass-E pre-amplifier driver for increased efficiency. Operating from a 2.5V supply, the amplifier achieves a 50% Power-Added Efficiency(PAE) with a 1-GHz CW signal at a peak output power of 20 dBm. Two tone measurements yield a PAE of 35% with inter-modulation components below 35dBc.
Keywords :
Breakdown voltage; CMOS technology; Capacitance; Driver circuits; Frequency; Inductors; MOS devices; Power amplifiers; Power generation; Stress;
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
