• DocumentCode
    439474
  • Title

    A 9mW, 900-MHz CMOS LNA with 1.05dB-noise-figure

  • Author

    Gramegna, G. ; Magazzo, A. ; Sclafani, C ; Paparo, M. ; Erratico, P.

  • Author_Institution
    STMicroelectronics, Catania, Italy
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    73
  • Lastpage
    76
  • Abstract
    A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process with on-chip inductors. The LNA, housed in a standard TQFP48 package, features: Noise Figure NF=0.9dB with S11=-10.1dB, S22=-27dB, Power Gain Gp=14dB, input IP3=0dBm at Pdc=18mW. A NF=1.05dB is measured at Pdc=9mW. The reported LNA exhibits the best noise or power performance ever reported in CMOS technology.
  • Keywords
    BiCMOS integrated circuits; CMOS process; CMOS technology; Impedance matching; Inductors; Noise figure; Noise measurement; Noise reduction; Packaging; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439474