DocumentCode :
439505
Title :
Split-drain MOST based circuit for measuring electric power
Author :
Filho, Carlos Alberto dos Reis
Author_Institution :
State University of Campinas, UNICAMP, Campinas, Brazil
fYear :
2000
fDate :
19-21 Sept. 2000
Firstpage :
208
Lastpage :
211
Abstract :
An arrangement of P-channel split-drain MOS transistors is presented, which detects an applied magnetic field, whose flux density is B[Tesla], and produces an output current signal that is proportional to the product B×e, where e[Volt] is an applied voltage signal. When B and e are respectively proportional to the current and voltage on a test load, the output signal produced by the circuit is a measure of the corresponding power. The core of this circuit was fabricated in standard 0.8µm CMOS technology and 64 units of this core were connected in parallel to make up the prototype chip. Measurements of this circuit have shown that a low-cost monolithic solution for power metering is technically feasible.
Keywords :
CMOS technology; Circuit testing; Current measurement; Electric variables measurement; MOSFETs; Magnetic field measurement; Power measurement; Prototypes; Semiconductor device measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
Type :
conf
Filename :
1471248
Link To Document :
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