Integrated LC-tuned VCO in BiCMOS process

Fully integrated LC-tuned VCO in BiCMOS process has been studied for a current consumption point of view, in this work. Both Bipolar VCO and CMOS VCO were designed optimally in same chip to compare the performance. The power consumption of BJT VCO and CMOS VCO were 5.9 mA and 3.9 mA, respectively, for 560 MHz VCO, in spite of a trans-conductance of MOSFET is lower than BJT´s one. This is because of CMOS VCO has large oscillation amplitude even in low Q resonator due to high linearity. Both VCO were compared simulation and measurement using 0.6 µm BiCMOS process.