A 2.4-GHz single-pole double-throw T/R switch with 0.8-dB insertion loss implemented in a CMOS process

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated using 3.3-V, 0.35-µm MOS transistors in a 0.18-µm CMOS process utilizing p^-substrates. The switch exhibits 0.8-dB insertion loss and 17-dBm P1dB. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the source/drain-to-body capacitances and substrate resistances, while the high P1dBis achieved by dc biasing the input and output nodes.