• DocumentCode
    439700
  • Title

    A GSM receiver base band in 0.25 µ , 1.8V fully depleted SOI including a 4thorder serial Σ Δ A/D converter

  • Author

    Compagne, E. ; Sevenhans, J. ; Raynaud, C.

  • Author_Institution
    Dolphin Integration, Meylan, France
  • fYear
    2001
  • fDate
    18-20 Sept. 2001
  • Firstpage
    551
  • Lastpage
    554
  • Abstract
    SOI technology is very promising for digital low voltage low power devices, but radio integration requires also the base band analog and the RF circuits to be realised in the same technology for a single chip radio. In the analog circuits we learn to live with the kink effect and in the RF we benefit from the low drain&source to bulk capacitance. In this paper we report the obstacles encountered in the base band analog design for a GSM receiver and the 4thorder serial sigma delta architecture.
  • Keywords
    Circuits; Digital filters; Electrical capacitance tomography; GSM; Hip; Low pass filters; Radio frequency; Rain; Read only memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2001. ESSCIRC 2001. Proceedings of the 27th European
  • Conference_Location
    Villach, Austria
  • Type

    conf

  • Filename
    1471454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439700