DocumentCode
43974
Title
Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under 
Gamma Irradiation
Author
Verma, Shalini ; Praveen, Kumsi C. ; Bobby, Achamma ; Kanjilal, D.
Author_Institution
Inter-Univ. Accel. Centre, Jawaharlal Nehru Univ., New Delhi, India
Volume
14
Issue
2
fYear
2014
fDate
Jun-14
Firstpage
721
Lastpage
725
Abstract
The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I-V ) and capacitance-voltage (C-V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss Se of gamma ray photons.
Keywords
Schottky barriers; capacitance measurement; cobalt; electric current measurement; electron transport theory; elemental semiconductors; gamma-rays; gold; recovery; semiconductor junctions; silicon; voltage measurement; 60Co gamma rays; 60Co; Au-Si; Au-n-Si metal-semiconductor Schottky barrier junction; C-V measurements; I-V measurements; Schottky interface; annealing; capacitance-voltage measurements; current-voltage measurements; electrical transport characteristics; electronic energy loss; energy loss mechanisms; gamma irradiation; gamma ray photons; ideality factor; interface defects; radiation absorbed dose 0.85 Mrad to 340 Mrad; recovery effect; Annealing; Educational institutions; Energy loss; Physics; Radiation effects; Schottky diodes; Silicon; $I$?? $V$ and $C$?? $V$ characteristics; Defect annealing; Schottky barrier interface; gamma irradiation;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2014.2312753
Filename
6776434
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