DocumentCode
439786
Title
Low-drift bandgap voltage references
Author
Fruett, F. ; Meijer, G.C.M. ; Bakker, A.
Author_Institution
Delft University of Technology, The Netherlands
fYear
2002
fDate
24-26 Sept. 2002
Firstpage
383
Lastpage
386
Abstract
This paper shows a systematic approach to calculate and to minimize mechanical-stress-related problems in bandgap voltage references. Mechanical stress is the main cause of long-term drift and packaging-induced inaccuracy in bandgap voltage references. Especially, low-cost epoxy packaging can cause a large mechanical stress, being in the range between -200 MPa and +200 MPa. This stress shows local variations over the chip area and changes over time or during thermal cycling. Due to the piezojunction effect, this stress causes changes and drift in the base-emitter voltages of bipolar transistors and consequently in the output voltage of bandgap references. In this paper it is shown that, even when using low-cost IC and packaging technology, a bandgap reference with a high immunity for the effects of mechanical stress can be realised.
Keywords
Bipolar transistors; Circuits; Compressive stress; Packaging; Photonic band gap; Polynomials; Temperature dependence; Tensile stress; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location
Florence, Italy
Type
conf
Filename
1471545
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