Precision and robust CMOS voltage reference based on the work function difference of poly Si gate

This paper presents a new precision and robust CMOS voltage reference consisting of two sets of pair transistors: One of the sets has negative temperature coefficient of their threshold voltage difference, while the other positive temperature coefficient. A main feature of the Voltage Reference is the use of pair transistors which ensures the accuracy of the reference circuit under process fluctuations. The measured results revealed without adjusting trimming that the voltage reference has (1)excellent reproducibility of the output voltage within ± 2%, (2)low temperature coefficient of less than 80ppm/°C and (3)low current consumption of 0.6µA.