DocumentCode :
439842
Title :
92 GHz cut-off frequency InP double channel HEMT based coplanar distributed amplifier for 40 Gbit/s applications and beyond
Author :
Meliani, C. ; Post, G. ; Decobert, J. ; Mouzannar, W. ; Rondeau, G. ; Dutisseuil, E. ; Lefevre, R.
Author_Institution :
OPTO+, Alcatel R&I, Marcoussis, France
fYear :
2002
fDate :
24-26 Sept. 2002
Firstpage :
615
Lastpage :
617
Abstract :
In this paper, we present the design, fabrication and measurements of an ultra broad band amplifier with 92 GHz cut-off frequency intended for ETDM transmission applications over 40 Gbit/s. The circuit is based on InP double channel HEMT technology developed in OPTO+ to get high frequeny-breakdown voltage product. We will discuss the use of coplanar wave-guide lines and low impedance bias micro-strip transmission lines in such a design. We will also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain bandwidth for 80 Gbit/s ETDM communications.
Keywords :
Bandwidth; Circuits; Cutoff frequency; Distributed amplifiers; Fabrication; Frequency measurement; HEMTs; Impedance; Indium phosphide; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location :
Florence, Italy
Type :
conf
Filename :
1471602
Link To Document :
بازگشت