• DocumentCode
    439850
  • Title

    A 1.5 V 75 dB-dynamic range 3rd-order Gm-C filter integrated in a 0.18 µm standard digital CMOS process

  • Author

    Yodprasit, U. ; Enz, C.C.

  • Author_Institution
    Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland
  • fYear
    2002
  • fDate
    24-26 Sept. 2002
  • Firstpage
    647
  • Lastpage
    650
  • Abstract
    A design methodology of a CMOS low-voltage linear transconductor for low-power baseband filter applications is proposed in this paper. The transconductor linearization scheme is based on regulating the drain voltage of triode-biased input transistors through an active cascode loop. A 3rd-order lowpass Butterworth baseband filter implemented with this transconductor is integrated in a 0.18µm standard digital CMOS process. It can operate from 1.2-1.8 V supply voltage with a cutoff frequency ranging from 15 to 85 kHz The dynamic range measured at 1.5 V is 75 dB, while dissipating 240µW.
  • Keywords
    Baseband; CMOS process; Cutoff frequency; Design methodology; Digital filters; Dynamic range; Frequency measurement; Nonlinear filters; Transconductors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
  • Conference_Location
    Florence, Italy
  • Type

    conf

  • Filename
    1471610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439850