Circuit design with metallic single-electron tunneling junctions

Nanoelectronics try to benefit from the reduction of the devices´ feature sizes. Design strategies have to be introduced for new devices such as single-electronics devices. Single-electronics devices are capable of controlling the transport of only one electron. In this manner, the charge transfer through the device is quantized. In this paper we describe a new equivalent circuit model for single-electronics. In particular the model is useful for the design of circuits that include the metallic single-electron tunneling (SET) junctions and charge storing islands. The Coulomb blockade phenomenon is expressed in local potentials. In our model, we do not explicitly model a tunnel resistance, which opens the way for high maximum switching speeds. Simulations of the single-electronic electron-pump circuit with a SPICE model based on our circuit models are verified by showing identical behavior as simulations done with the SET-device simulator SIMON.