DocumentCode
439896
Title
A 900 MHz, 2.7 V highly linear driver amplifier using 0.5 µm Si BiCMOS
Author
Kwang Ho Ahn ; Hyun Seok Kim ; Dong Jin Kum ; Byeong Ha Park
Author_Institution
Samsung Electronics Co., Ltd., Yongin, Kyunggi-Do, Korea
fYear
2002
fDate
24-26 Sept. 2002
Firstpage
831
Lastpage
834
Abstract
A highly linear driver amplifier for 900 MHz cellular transmitter IC is presented. The amplifier operates from a 2.7 V to 3.3 V supply. At 2.7 V, ACPR (Adjacent Channel Power Ratio) of transmitter IC is as high as 50 dBc with an output power of 8.7 dBm. The high ACPR of transmitter IC is due to the high linearity of driver amplifier. To improve linearity of driver amplifier, we also investigate the appropriate emitter degeneration inductance at constant power by Volterra-series analysis. The driver amplifier is fabricated using a 0.5 µm BiCMOS process.
Keywords
BiCMOS integrated circuits; Capacitance; Driver circuits; Impedance; Linearity; Multiaccess communication; Power amplifiers; Power generation; Radiofrequency amplifiers; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location
Florence, Italy
Type
conf
Filename
1471656
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