• DocumentCode
    439933
  • Title

    Millimeter-wave silicon Impatt diodes

  • Author

    Edwards, R. ; Misawa, Tetsuya ; Iglesias, D.E. ; Decker, Vincent

  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    18
  • Lastpage
    18
  • Abstract
    Silicon Impatt diodes have been fabricated for operation at frequencies in the vicinity of 50 GHz and 100 GHz. Advances in diode fabrication methods together with refinements in oscillator circuitry have resulted in improved state-of-the-art values for the (frequency)2times (power output) measure of avalanche diode performance.
  • Keywords
    Diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1475963
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439933